(China (Mainland))
Product Summary
The M29F800DT-70N6F is a 8 Mbit (1Mb x8 or 512Kb x16)non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (5V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F800DT-70N6F is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.
Parametrics
M29F800DT-70N6F absolute maxing ratings: (1)TBIAS Temperature Under Bias: min=-50℃, max=125℃; (2)TSTG Storage Temperature: min=-65℃, max=150℃; (3)VIO Input or Output Voltage (1,2): min=-0.6V, max=VCC+0.6V; (4)VCC Supply Voltage: min=-0.6, max=6V; (5)VID Identification Voltage: min=-0.6V, max=13.5V.
Features
M29F800DT-70N6F features: (1)SUPPLY VOLTAGE: VCC = 5V ±10% for Program, Erase and Read; (2)ACCESS TIME: 55, 70, 90ns; (3)PROGRAMMING TIME: 10μs per Byte/Word typical; (4)19 MEMORY BLOCKS: 1 Boot Block (Top or Bottom Location); 2 Parameter and 16 Main Blocks; (5)PROGRAM/ERASE CONTROLLER: Embedded Byte/Word Program algorithms; (6)ERASE SUSPEND and RESUME MODES: Read and Program another Block during Erase Suspend; (7)UNLOCK BYPASS PROGRAM COMMAND: Faster Production/Batch Programming.
Diagrams
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STMicroelectronics |
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Data Sheet |
Negotiable |
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