M50FW080N1G

memory, TSOP, -0.6 to 13V

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Price:: US $1.00~15.00 / piece [Get Latest Price]

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	US $1.00~15.00

PartNumber:: M50FW080N1G

Brand:: STMicroelectronics - ST | Pack: TSOP | D/C: 07+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Total Price:: US $0

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Products Upload time: 2011-08-05

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Part Number:M50FW080N1G
US $1.00 - 15.00
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Product Summary

The M50FW080N1G is an 8 Mbit (1Mbit x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing in production lines an optional 12V power supply can be used to reduce the programming and the erasing times. The M50FW080N1G is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased.

Parametrics

M50FW080N1G absolute maxing ratings: (1)TSTG Storage Temperature: min=-65℃, max=150℃; (2)VIO Input or Output range 2: min=-0.50V, max=VCC+0.6V; (3)VCC Supply Voltage: min=-0.50V, max=4V; (4)VPP Program Voltage: min=-0.6V, max=13V; (5)VESD Electrostatic Discharge Voltage (Human Body model) 3: min=-2000V, max=2000V.

Features

M50FW080N1G features: (1)SUPPLY VOLTAGE: VCC = 3V to 3.6V for Program, Erase and Read Operations; VPP = 12V for Fast Program and Fast Erase (optional); (2)TWO INTERFACES: Firmware Hub (FWH) Interface for embedded operation with PC Chipsets; Address/Address Multiplexed (A/A Mux) Interface for programming equipment compatibility; (3)PROGRAMMING TIME: 10μs typical; Quadruple Byte Programming Option; (4)16 UNIFORM 64 KByte MEMORY BLOCKS; (5)PROGRAM/ERASE CONTROLLER: Embedded Byte Program and Block/Chip Erase algorithms; Status Register Bits; (6)PROGRAM and ERASE SUSPEND: Read other Blocks during Program/Erase Suspend; Program other Blocks during Erase Suspend.