(China (Mainland))
Product Summary
The PTF081301E is a 130-watt, internally-matched GOLDMOS FET intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhanced packaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliability.
Parametrics
Maximum ratings: (1)Drain-Source Voltage, VDSS: 65 V; (2)Gate-Source Voltage, VGS: –0.5 to +12 V; (3)Junction Temperature, TJ: 200 ℃; (4)Total Device Dissipation, PD: 473 W; Above 25℃ derate by 2.70 W/℃; (5)Storage Temperature Range, TSTG: –40 to +150 ℃; (6)Thermal Resistance (TCASE = 70℃), RqJC: 0.37 ℃/W.
Features
Features: (1)Thermally-enhanced packages; (2)Broadband internal matching; (3)Typical EDGE performance: Average output power = 65 W; Gain = 18 dB; Efficiency = 40%; (4)Typical CW performance: Output power at P–1dB = 150 W; Gain = 17 dB; Efficiency = 55%; (5)Integrated ESD protection: Human Body Model, Class 1 (minimum); (6)Excellent thermal stability; (7)Low HCI drift; (8)Capable of handling 10:1 VSWR @ 28 V, 130 W (CW) output power.
Diagrams
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 PTF01-083T-103B1 |
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Slide Potentiometers PANEL CONTROL - SLIDE CARBON |
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Negotiable |
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PTF01-151A-102B2 |
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Slide Potentiometers 1Kohms Travel=100mm |
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PTF01-151A-103B2 |
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Slide Potentiometers 10Kohms Travel=100mm |
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PTF01-151A-104B2 |
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Slide Potentiometers 100Kohms Travel=100mm |
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PTF01-151A-105B2 |
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Slide Potentiometers 1Mohms Travel=100mm |
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PTF01-151A-202B2 |
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Slide Potentiometers 2Kohms Travel=100mm |
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